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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0800 Features * Usable Gain to 6.0 GHz * High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz * Low Noise Figure: 3.0 dB Typical at 1.0 GHz Description The MSA-0800 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use". Chip Outline[1] Note: 1. Refer to the APPLICATIONS section "Silicon MMIC Chip Use" for additional information. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) C block IN MSA C block OUT Vd = 7.8 V 5965-9595E 6-410 MSA-0800 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200C 200C Thermal Resistance[2,4]: jc = 70C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 14.3 mW/C for TMounting Surface > 148C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASURE- Electrical Specifications[1], TA = 25C Symbol GP Parameters and Test Conditions[2]: Id = 36 mA, ZO = 50 Power Gain (|S21| 2) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 to 3.0 GHz f = 1.0 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. Typ. 32.5 23.5 11.0 2.0:1 1.9:1 Max. VSWR NF P1 dB IP3 tD Vd dV/dT Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient dB dBm dBm psec V mV/C 7.0 3.0 12.5 27.0 125 7.8 -17.0 8.4 Notes: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration. Part Number Ordering Information Part Number MSA-0800-GP4 Devices Per Tray 100 6-411 MSA-0800 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 36 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .65 .61 .50 .43 .38 .34 .31 .32 .33 .34 .36 .36 .35 .43 -17 -31 -54 -70 -81 -95 -110 -124 -129 -138 -146 -155 177 150 32.6 31.7 29.6 27.5 25.6 24.2 20.9 18.3 16.3 14.4 12.8 11.3 8.7 6.3 42.50 38.59 30.22 23.64 19.05 16.27 11.12 8.22 6.52 5.24 4.36 3.68 2.73 2.07 163 148 126 113 103 93 78 66 61 54 45 37 23 10 -36.9 -34.1 -31.0 -28.5 -26.7 -25.4 -23.6 -22.6 -20.7 -20.3 -19.0 -18.3 -17.2 -16.6 .014 .020 .028 .038 .046 .054 .066 .075 .092 .097 .112 .122 .138 .148 39 47 52 52 53 55 53 53 57 54 50 49 43 35 .64 .59 .49 .40 .35 .30 .23 .17 .13 .07 .07 .10 .15 .15 -20 -39 -68 -90 -106 -120 -142 -158 -162 -165 -140 -96 -75 -81 0.80 0.68 0.63 0.69 0.75 0.80 0.88 0.98 1.00 1.11 1.11 1.16 1.28 1.40 Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 35 30 Gain Flat to DC 25 25 35 24 Gp (dB) 0.1 GHz 30 0.5 GHz 1.0 GHz 23 22 21 GP 13 12 G p (dB) 20 2.0 GHz P1 dB 15 10 5 10 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 11 10 NF (dB) 4.0 GHz 4 3 2 -55 -25 +25 +85 NF 20 30 I d (mA) 40 +125 TEMPERATURE (C) Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 1.0 GHz, Id = 36 mA. 16 I d = 40 mA 14 12 10 8 I d = 36 mA 4.5 I d = 20 mA I d = 36 mA I d = 40 mA 4.0 P1 dB (dBm) NF (dB) 3.5 3.0 6 I d = 20 mA 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) 4 0.1 Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-412 P1 dB (dBm) 20 G p (dB) MSA-0800 Chip Dimensions GROUND INPUT 305 m 12 mil OPTIONAL OUTPUT[1] 394 m 15.5 mil Unless otherwise specified, tolerances are 13 m / 0.5 mils. Chip thickness is 114 m/4.5 mil. Bond Pads are 41 m/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die. 6-413 |
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